LC75810E 查看數據表（PDF） - ON Semiconductor
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LC75810E Datasheet PDF : 54 Pages
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LC75810E/T
WM: Sets the method of writing data to CGRAM.
WM
CGRAM data write method
0 Normal CGRAM data write (Specifies a CGRAM address and write a CGRAM data.)
1 Double write mode CGRAM data write (Specifies two CGRAM addresses and writes two CGRAM data to those addresses.)
∗23: • CGRAM data write method when WM is 0.
CE
CCB address
DI
CGRAM
CCB address
(6)
64 bits
CCB address
(6)
64 bits
(6)
64 bits
CCB address
(6)
64 bits
Instruction
execution
time (27 µs)
Instruction
execution
time (27 µs)
CGRAM data
write finishes
Instruction
execution
time (27 µs)
CGRAM data
write finishes
CGRAM data
write finishes
Instruction
execution
time (27 µs)
CGRAM data
write finishes
• CGRAM data write method when WM is 1.
CE
CCB address
DI
CGRAM
(7)
120 bits
CCB address
Instruction
execution time
(40.5μs) CGRAM data
write finishes
(7)
120 bits
Instruction
execution time
(40.5μs) CGRAM data
write finishes
CCB address
(7)
120 bits
Instruction
execution time
(40.5μs) CGRAM data
write finishes
Note that the instruction execution times of 27 µs and 40.5 µs apply when fosc = 300 kHz, and that these times will differ
when the oscillator frequency fosc differs.
Data format (6) (64 bits)
Code
D80 D81 D82 D83 D84 D85 D86 D87 D88 D89 D90 D91 D92 D93 D94 D95
CD1 CD2 CD3 CD4 CD5 CD6 CD7 CD8 CD9 CD10 CD11 CD12 CD13 CD14 CD15 CD16
Code
D96 D97 D98 D99 D100 D101 D102 D103 D104 D105 D106 D107 D108 D109 D110 D111
CD17 CD18 CD19 CD20 CD21 CD22 CD23 CD24 CD25 CD26 CD27 CD28 CD29 CD30 CD31 CD32
Code
D112 D113 D114 D115 D116 D117 D118 D119 D120 D121 D122 D123 D124 D125 D126 D127
CD33 CD34 CD35 CD36 CD37 CD38 CD39 CD40 CD41 CD42 CD43 CD44 CD45 X
X
X
D128
CA0
D129
CA1
D130
CA2
D131
CA3
D132
CA4
D133
CA5
D134
CA6
Code
D135 D136
CA7 0
D137
X
D138
X
D139
0
D140
0
D141
1
D142
1
D143
1
X: don’t care
No.7141-28/54
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