VG26S17405J 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17405J

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor  

VIS

VG26(V)(S)17405FJ

4,194,304 x 4 - Bit

CMOS Dynamic RAM

EDO Page Mode Read Modify Write Cycle

Parameter

EDO page mode read- modify- write cycle

CAS precharge to WE delay time

EDO page mode read- modify- write cycle

time

Symbol

tCPW

VG26(V)(S) 17405

-5

-6

Min Max Min Max Unit

45

- 55

- ns

Notes

10

tPRWC

56

- 68

- ns

Document:1G5-0162

Rev.1

Page 13

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