KA1H0280R 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
KA1H0280R Datasheet PDF : 8 Pages
| |||
SPS
KA1H0280R
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Min.
Drain-source breakdown voltage
Zero gate voltage drain current
BVDSS
IDSS
Static drain-source on resistance (note) RDS(ON)
Forward transconductance (note)
gfs
Input capacitance
Ciss
Output capacitance
Coss
VGS=0V, ID=50µA
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=1.0A
VDS=50V, ID=1.0A
VGS=0V, VDS=25V,
f=1MHz
8000
−
−
−
1.5
−
−
Reverse transfer capacitance
Crss
−
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on)
VDD=0.5BVDSS, ID=2.0A
−
tr
(MOSFET switching
time are essentially
−
td(off)
independent of
−
tf
operating temperature)
−
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Qg
VGS=10V, ID=2.0A,
−
VDS=0.5BVDSS (MOSFET
Qgs
switching time are
essentially independent of
−
Qgd
operating temperature)
−
NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
Typ.
−
−
−
5.6
2.5
250
52
25
21
28
77
24
−
15
20
Max.
−
50
200
7.0
−
−
−
−
−
−
−
−
60
−
−
Unit
V
µA
µA
Ω
mho
pF
nS
nC
3
Share Link: 