KSC5305DF 查看數據表（PDF） - Fairchild Semiconductor
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KSC5305DF Datasheet PDF : 6 Pages
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KSC5305DF
NPN Silicon Transistor
September 2009
Features
• High Voltage High Speed Power Switch
Equivalent Circuit
C
Application
B
1
TO-220F
• Built-in Free-wheeling Diode makes efficient anti saturation operation
E
1.Base 2.Collector 3.Emitter
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
• Low base drive requirement
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
800
400
12
5
10
2
4
40
150
-65 to +150
Units
V
V
V
A
A
A
A
W
°C
°C
Rating
3.125
69.5
Units
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
KSC5305DF Rev. A3
1
www.fairchildsemi.com
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