KSB1022 查看數據表（PDF） - Fairchild Semiconductor

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KSB1022

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSB1022

High Power Switching Applications

• High DC Current Gain

• Low Collector-Emitter Saturation Voltage

• Complement to KSD1417

1

TO-220F

1.Base 2.Collector 3.Emitter

PNP Silicon Darlington Transisto

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

ICP

IB

PC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Collector Dissipation (Ta=25°C)

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Value

- 60

- 60

-5

-7

- 10

- 0.7

2

30

150

- 55 ~ 150

Units

V

V

V

A

A

A

W

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCEO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

tON

tSTG

tF

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Turn ON Time

Storage Time

Fall Time

IC = - 50mA, IB = 0

VCB = - 60V, IE = 0

VEB = - 5V, IC = 0

VCE = - 3V, IC = - 3A

VCE = - 3V, IC = - 7A

IC = - 3A, IB = - 6mA

IC = - 7A, IB = - 14mA

IC = - 3A, IB = - 6mA

VCC = - 45V, IC = - 3A

IB1 = - IB2 = - 6mA

RL = 15Ω

Min.

- 60

2000

1000

Typ.

Max.

- 100

-4

15000

Units

V

µA

mA

- 0.95 - 1.5

V

- 1.3

-2

V

- 1.55 - 2.5

V

0.8

µs

2

µs

2.5

µs

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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