HA-2839/883 查看數據表（PDF） - Harris Semiconductor
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HA-2839/883 Datasheet PDF : 5 Pages
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Die Characteristics
DIE DIMENSIONS:
65 x 52 x 19 mils ± 1 mils
1650 x 1310 x 483µm ± 25.4µm
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Al, 1% Cu
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1kÅ
WORST CASE CURRENT DENSITY:
1.3 x 105 A/cm2 at 3.4mA
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 34
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2839/883
HA-2839/883
V+
OUT
-IN
+IN
V-
Spec Number 511089-883
3-57
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