KO4616 查看數據表（PDF） - KEXIN Industrial
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KO4616 Datasheet PDF : 7 Pages
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SMD Type
MOSFET
Complementary Trench MOSFET
AO4616 (KO4616)
■ P-Channel Typical Characterisitics
60
-10V
-7V
50
-5V
40
-4.5V
30
20
-3.5V
10
VGS=-3V
0
0
1
2
3
4
5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
40
35
30
VGS=-4.5V
25
20
VGS=-10V
15
10
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
40
VDS=-5V
30
20
125°C
10
25°C
0
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
VGS=-10V
1.4
ID=-7A
1.2
1
IVDG=S-=3.-54A.150V
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
0
Figure
4:
On-Resistance vs. Junction
(Note E)
Tem1p8erature
60
ID=-7A
50
40
30
25°C
20
125°C
10
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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