181RKI Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
40
400
181RKI
80
800
100
1000
VRSM , maximum non-
repetitive peak voltage
V
500
900
1100
IDRM/IRRM max.
@ TJ = TJ max.
mA
30
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2√t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Typical latching current
Switching
di/dt
Parameter
Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
181RKI
180
80
285
3800
4000
3500
3660
72
66
61
56
720
0.83
0.89
0.92
0.81
1.35
600
1000
Units Conditions
A 180° conduction, half sine wave
°C
DC @ 79°C case temperature
12
t = 10ms No voltage
A t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2√s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I > π x IT(AV)),TJ = TJ max.
V Ipk= 570A, TJ = TJ max, tp = 10ms sin2e22p2u2ls2e2222222
mA T = 25°C, anode supply 12V resistive load
J
181RKI
300
1.0
100
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 50A, TJ = TJ max, di/dt = 10A/µs, VR = 100V
dv/dt = 20V/µs
2