BD234 查看數據表（PDF） - Inchange Semiconductor

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BD234

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

BD234 BD236 BD238

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A

VBE

Base-emitter on voltage

IC=-1A ; VCE=-2V

VCEO(SUS)

Collector-emitter

sustaining voltage

BD234

BD236 IC=-0.1A; IB=0

BD238

BD234 VCB=-45V; IE=0

ICBO

Collector cut-off current BD236 VCB=-60V; IE=0

BD238 VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-150mA ; VCE=-2V

hFE-2

DC current gain

IC=-1A ; VCE=-2V

fT

Transition frequency

IC=-250mA; VCE=-10V

MIN TYP. MAX UNIT

-0.6

V

-1.3

V

-45

-60

V

-80

-100 μA

-1

mA

40

25

3

MHz

2

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