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零件编号
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MGW20N120 查看數據表(PDF) - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MGW20N120
Insulated Gate Bipolar Transistor
ON Semiconductor
MGW20N120 Datasheet PDF : 6 Pages
1
2
3
4
5
6
MGW20N120
100
10
1
V
GE
= 15 V
R
GE
= 20
Ω
T
J
= 125
°
C
0.1
1
10
100
1000
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 7. Reverse Biased
Safe Operating Area
10,000
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
1.0E−03
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
R
θ
JC
(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
θ
JC
(t)
1.0E−02
t, TIME (s)
1.0E−01
1.0E+00
1.0E+01
Figure 8. Thermal Response
4
Motorola IGBT Device Data
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