STB7NB40T4 查看數據表（PDF） - STMicroelectronics

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STB7NB40T4

N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET

STMicroelectronics 

STB7NB40

N - CHANNEL ENHANCEMENT MODE

PowerMESH™ MOSFET

TYPE

STB7NB40

V DSS

400 V

RDS(on)

< 0.9 Ω

ID

7.0 A

s TYPICAL RDS(on) = 0.75 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

s FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

Using the latest high voltage technology, SGS-Thomson

has designed an advanced family of power Mosfets with

outstanding performances. The new patent pending strip

layout coupled with the Company’s proprietary edge

termination structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteristics.

PRELIMINARY DATA

3

1

D2PAK

TO-263

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM ( •)

Ptot

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Value

STB7NB40

400

400

± 30

7

4.4

28

100

0.8

4.5

-65 to 150

150

(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Uni t

V

V

V

A

A

A

W

W/oC

V/ ns

oC

oC

October 1997

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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