BD546C 查看數據表（PDF） - New Jersey Semiconductor
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BD546C Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD546
Collector-Emitter
V(BR)CEO Breakdown Voltage
BD546A
BD546B
| _ — O A m A .1 — fi
BD546C
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -5A;IB= -0.625A
VcE(sat)-2 Collector-Emitter Saturation Voltage IC=-10A;IB=-2A
VeE(on) Base-Emitter On Voltage
lc=-10A;VCE=-4V
BD546
VCE= -40V; VBE= 0
Collector
ICES
Cutoff Current
BD546A
BD546B
VCE= -60V; VBE= 0
VCE= -80V; VBE= 0
BD546C
VcE=-100V;VBE=0
Collector
ICEO
Cutoff Current
BD546/A VCE= -30V; IB- 0
BD546B/C VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1 DC Current Gain
lc=-1A;VCE=-4V
hFE-2
DC Current Gain
hFE-3
DC Current Gain
Switching times
lc= -5A; VCE= -4V
lc= -1 OA; VCE= -4V
ton
Turn-on Time
toff
Turn-off Time
lc=-6A;lBi=-lB2=-0.6A;
RL=5Q;VBE(0ff)=4V
BD546/A/B/C
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-0.8
V
-1.0
V
-1.8
V
-0.4 mA
-0.7 mA
-1.0 mA
60
25
10
0.4
us
0.7
us
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