QM100TX1-HB 查看數據表（PDF） - MITSUBISHI ELECTRIC
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QM100TX1-HB Datasheet PDF : 5 Pages
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SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10 1
7
VCC=300V
IB1=150mA
5
4
IC=75A
3
2
ts
10 0
7
5
4
3
2
10 –1
10 0
tf
2 3 4 5 7 101
Tj=25°C
Tj=125°C
2 3 4 5 7 102
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 3
7
500µs
5
100µs
3
2
10 2
7
500µs
5
3
2
DC
1ms
10 1
7
5
3 TC=25°C
2 NON–REPETITIVE
10 0
10 0 2 3 5 7 10 1 2 3
5 7 10 2 2 3
5 7 10 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 5 710 1 2 3 5 710 2
0.5
0.4
0.3
0.2
0.1
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
300
200
IB2=–2.0A
IB2=–3.5A
100
Tj=125°C
0
0 100 200 300 400 500 600 700 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
SECOND
90
BREAKDOWN
AREA
80
70
60
50
COLLECTOR
40
DISSIPATION
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
10 2 CHARACTERISTICS) (TYPICAL)
7
Tj=25°C
Tj=125°C
5
4
3
2
10 1
7
5
4
3
2
10 0
0
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
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