Q67000-S652(1999) 查看數據表（PDF） - Infineon Technologies
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Q67000-S652 Datasheet PDF : 8 Pages
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SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
BSP 89
Type
BSP 89
Type
BSP 89
VDS
240 V
ID
0.36 A
Ordering Code
Q67000-S652
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
RDS(on)
6Ω
Package
SOT-223
Tape and Reel Information
E6327
Marking
BSP 89
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current
TA = 29 ˚C
DC drain current, pulsed
TA = 25 ˚C
Power dissipation
TA = 25 ˚C
Symbol
VDS
V
DGR
VGS
ID
IDpuls
Ptot
Values
Unit
240
V
240
± 20
Class 1
A
0.36
1.44
W
1.7
Data Sheet
1
05.99
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