Q67000-S652 查看數據表（PDF） - Siemens AG
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Q67000-S652 Datasheet PDF : 9 Pages
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BSP 89
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
0.80
Ptot = 2W
lj
k
i
h
g
A
ID
0.60
0.50
0.40
0.30
0.20
f
VGS [V]
a
2.0
b
2.5
c
3.0
ed
3.5
e
4.0
f
4.5
g
5.0
h
6.0
i
7.0
d
j
8.0
k
9.0
l
10.0
c
0.10
b
0.00
a
0 1 2 3 4 5 6 7 8 V 10
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
19
Ωa
b
c
d
e
16
RDS (on)
14
12
10
8
6
f
g
4
j h ki
2
VGS [V] =
ab
c
d
e
f
2.05 3.0 3.5 4.0 4.5 5.0
0
ghi j k
6.0 7.0 8.0 9.0 10.0
0.00 0.10 0.20 0.30 0.40 0.50 0.60 A 0.80
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
1.2
A
ID
0.8
0.6
0.4
0.2
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.55
S
gfs 0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.00 0.10 0.20 0.30 0.40 A 0.55
ID
Sep-12-1996
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