EC21QS09 查看數據表（PDF） - Nihon Inter Electronics

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产品描述 (功能)

生产厂家

EC21QS09

Schottky Barrier Diode

Nihon Inter Electronics 

S B D T y p e : EC21QS09

FEATURES

* Miniature Size,Surface Mount Device

* Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Capability

* 0 Volts through 100Volts Types Available

* ackaged in 12mm Tape and Reel

* Not Rolling During Assembly

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.06g

Rating

Symbol

EC21QS09

Unit

Repetitive Peak Reverse Voltage

VRRM

90

V

Average Rectified Output Current

Io

1.3 Ta=29 °C *1

2.0 Tl=107 °C

50Hz Half Sine

Wave Resistive Load

A

RMS Forward Current

IF(RMS)

3.14

A

Surge Forward Current

IFSM

50

50Hz Half Sine Wave,1cycle

Non-repetitive

A

Operating JunctionTemperature Range Tjw

-40 to +150

°C

Storage Temperature Range

Tstg

-40 to +150

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Peak Reverse Current

Peak Forward Voltage

Thermal Junction to Ambient

Resistance Junction to Lead

IRM

VFM

Rth(j-a)

Rth(j-l)

Tj= 25°C, VRM= VRRM

Tj= 25°C, IFM= 2.0A

Alumina Substrate Mounted *1

-

*1 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides)

(Tl: Lead Temperature)

Min. Typ. Max.

--

1

- - 0.85

- - 108

- - 23

Unit

mA

V

°C /W

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