DG2535E 查看數據表（PDF） - Vishay Semiconductors
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DG2535E Datasheet PDF : 10 Pages
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TEST CIRCUITS
DG2535E, DG2733E
Vishay Siliconix
V+
Vgen
Rgen
+
VIN = 0 - V+
V+
NC or NO
IN
GND
COM
VOUT
VOUT
Δ VOUT
CL = 1 nF
IN
On
Off
On
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Fig. 3 - Charge Injection
V+
10 nF
V+
NC or NO
IN
COM COM
RL
GND
Analyzer
VCOM
Off Isolation = 20 log VNO / NC
Fig. 4 - Off-Isolation
0V, 2.4 V
V+
10 nF
V+
COM
IN
0 V, 2.4 V
NC or NO
GND
Meter
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Fig. 5 - Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75646.
S17-0156-Rev. A, 30-Jan-17
7
Document Number: 75646
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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