DIM400LSS17-A000 查看數據表（PDF） - Dynex Semiconductor
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DIM400LSS17-A000 Datasheet PDF : 10 Pages
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DIM400LSS17-A000
800
VF is measured at power busbars
and not the auxiliary terminals
700
600
Tj = 25˚C
500
Tj = 125˚C
400
300
200
100
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
400
350
300
250
200
150
100
50
Tj = 125˚C
0
0
400
800
1200
1600
Reverse voltage, VR - (V)
2000
Fig. 9 Diode reverse bias safe operating area
900
800
Chip
700
Module
600
500
400
300
200
Conditions:
100 Tcase = 125˚C,
Vge = 15V,
Rg(off) = 4.7ohms
0
0 200 400 600
800 1000 1200 1400 1600 1800
Collector emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
1000
100
IC(max) DC
10
tp = 50µs
tp = 100µs
tp = 1 ms
1
Tvj = 125˚C, Tcase = 68˚C
0.1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig. 10 Forward bias safe operating area
1000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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