FGB3245G2-F085 查看數據表（PDF） - ON Semiconductor
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FGB3245G2-F085 Datasheet PDF : 8 Pages
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Typical Performance Curves (Continued)
2000
1600
1200
CIES
f = 1MHz
800
400
CRES
COES
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
10
ICE = 10A, IG=1mA, TJ = 25oC
8
VCE = 6V
6
VCE = 12V
4
2
0
0
10
20
30
40
50
60
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge
480
ICER = 10mA
470
460
TJ = -40oC
450
TJ = 25oC
440
TJ = 175oC
430
420
10
100
1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Break down Voltage vs. Series Gate Resistance
6000
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.5
0.20
0.10
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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