FM2200-MH1 查看數據表（PDF） - Formosa Technology

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产品描述 (功能)

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FM2200-MH1

Chip Schottky Barrier Rectifier

Formosa Technology 

Chip Schottky Barrier Rectifier

Formosa MS

FM240-MH1 THRU FM2200-MH1

2.0A Surface Mount

Schottky Barrier Rectifiers - 40V-200V

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• Tiny plastic SMD package.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• Suffix "-H" indicates Halogen free parts, ex. FM240-ΜΗ1-H.

Mechanical data

• Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H1

• Terminals :Plated terminals, solderable per MIL-STD-750,

Method 2026

• Polarity : Indicated by cathode band

• Mounting Position : Any

• Weight : Approximated 0.0103 gram

Package outline

SOD-123H1

0.146(3.7)

0.130(3.3)

0.071(1.8)

0.056(1.4)

0.004(0.1) Typ.

0.031(0.8) Typ.

0.012(0.3) Typ.

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)

PARAMETER

SYMBOLS FM240-MH1 FM260-MH1 FM2100-MH1 FM2150-MH1 FM2200-MH1 UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

VRRM

40

60

100

150

200

Volts

VRMS

28

42

70

105

140

Volts

VDC

40

60

100

150

200

Volts

IO

2.0

Amps

Peak forward surge current 8.3ms single half sine-wave

IFSM

(JEDEC Method)

50

Amps

Maximum instantaneous forward voltage at IF=2.0A

VF

0.50

0.70

0.85

0.90

Maximum DC reverse current

TJ =25 °C

0.5

at rated DC blocking voltage

TJ =100°C

IR

10

Typical junction capacitance (Note 1)

CJ

160

Typical thermal resistance junction to ambient

Typical thermal resistance junction to case

RθJA

RθJC

Operating junction temperature range

TJ

-55 to +125

Storage temperature range

TSTG

Notes 1: Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

76

38

-55 to +150

-55 to +150

0.92

Volts

mA

pF

°C / W

°C / W

°C

°C

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Page 2

Document ID

DS-12164D

Issued Date

2013/12/17

Revised Date

-

Revision

A

Page.

7

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