FS7VS-5 查看數據表（PDF） - Renesas Electronics
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FS7VS-5 Datasheet PDF : 7 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
16
ID = 14A
8
7A
3A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
VDS = 50V
8
Pulse Test
6
4
2
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
103
7
5
Ciss
3
2
102
7
5
3
2
101
7 Tch = 25°C
5 f = 1MHz
3 VGS = 0V
2
Coss
Crss
100
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS7VS-5
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
TC = 25°C
Pulse Test
4
3
VGS = 10V
2
20V
1
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
5
3
2
TC = 25°C
75°C
100
125°C
7
5
3
2
10–1
100
23
5 7 101
VDS = 10V
Pulse Test
2 3 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 150V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
102
7
5
3
2
101
10–1 2 3
5 7 100
td(off)
tf
tr
td(on)
2 3 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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