CY7C1399BN 查看數據表（PDF） - Cypress Semiconductor
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CY7C1399BN Datasheet PDF : 8 Pages
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Data Retention Characteristics (Over the Operating Range - L version only)
Parameter
VDR
ICCDR
tCDR
tR
Description
VCC for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Conditions
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
Data Retention Waveform
CY7C1399BN
Min.
Max.
Unit
2.0
V
0
20
µA
0
ns
tRC
ns
DATA RETENTION MODE
VCC
3.0V
VDR > 2V
3.0V
tCDR
tR
CE
Switching Waveforms
Read Cycle No. 1[10, 11]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
Read Cycle No. 2[11, 12]
tRC
CE
tACE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
DATA VALID
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Notes:
10. Device is continuously selected. OE, CE = VIL.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
Document #: 001-06490 Rev. *A
Page 4 of 8
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