MMDT2227Q 查看數據表（PDF） - Diodes Incorporated.

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MMDT2227Q

40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR

Diodes Incorporated. 

MMDT2227Q

Absolute Maximum Ratings, NPN (2222A Type) (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

IC

Value

75

40

6

600

Unit

V

V

V

mA

Absolute Maximum Ratings, PNP (2907A Type) (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

IC

Value

-60

-60

-6

-600

Unit

V

V

V

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 7)

Operating and Storage and Temperature Range

Symbol

PD

RθJA

RθJC

TJ, TSTG

Value

200

625

150

-55 to +150

Unit

mW

°C/W

°C/W

°C

ESD Ratings (Note 8)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

4,000

400

Unit JEDEC Class

V

3A

V

C

Notes:

6. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device

is measured when operating in a steady-state condition.

7. Thermal resistance from junction to the top of package.

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristic and Derating Information

MMDT2227Q

Document number: DS40088 Rev. 1 - 2

2 of 6

www.diodes.com

November 2017

© Diodes Incorporated

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