Typical Characteristics
900
TJ = 25°C
800 IC = 8.0 A
700
600 V
600
500 V
500
400 V
400
300
200
400 V
500 V
600 V
18 10000
VCE = 600 V
16
VGE = 15 V
14
RG = 10 Ω
12 1000
10
8
6
100
4
TJ =125°C
25°C
100
2
0
0
10
0
10
20
30
40
50
60
70
1
QG, GATE CHARGE (nC)
10
IC, COLLECTOR CURRENT (A)
Figure 8. Gate–to–Emitter Voltage versus
Gate Charge
Figure 9. Inverter Switching Energy E(off) versus
Collector Current IC
10000
VCE = 600 V
VGE = 15 V
IC = 8.0 A
TJ =125°C
10000
VCE = 600 V
VGE = 15 V
RG = 10 Ω
TJ = 25°C
1000
1000
25°C
t(off)
tf
td
100
10
100
1000
RG, GATE RESISTANCE (Ω)
Figure 10. Inverter Switching Energy E(off) versus
Gate Resistance RG
100
1
10
IC, COLLECTOR CURRENT (A)
Figure 11. Inverter Switching Time tf, td, t(off)
versus Collector Current IC
10000
VCE = 600 V
VGE = 15 V
RG = 10 Ω
TJ = 125°C
1000
10000
VCE = 600 V
VGE = 15 V
IC = 8.0 A
TJ = 25°C
t(off)
td
t(off)
1000
tf
td
100
1
10
IC, COLLECTOR CURRENT (A)
Figure 12. Inverter Switching Time tf, td, t(off)
versus Collector Current IC
tf
100
10
100
1000
RG, GATE RESISTANCE (Ω)
Figure 13. Inverter Switching Time tf,td, t(off)
versus Gate Resistance RG
MHPM7B8A120A
6
MOTOROLA