CXA1940N 查看數據表（PDF） - Sony Semiconductor
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CXA1940N Datasheet PDF : 16 Pages
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CXA1940N
Unless otherwise specified, VCC=5V, Ta=25°C, fWD (Write data frequency)=5MHz, IW=20mA, LH (Head
inductance)=1µH, RH (Head DC resistance value)=30Ω
Refer to Fig. 2 to Fig. 4
No.
Item
Sym-
bol
Measurement conditions
Min. Typ. Max. Unit
14 Head differential
VSW Differential voltage between HX pin and HY pin 4.4 5.2
Vp-p
voltage amplitude
at switching of Write current
15 Write unsafe
FWUS FWUS is the max. Write data frequency when Pin
280 1000 kHz
detection max.
11 turns “High” in Write mode.
frequency
16-1 Mode switching time TRW TRW is the time required for Write current to turn
0.6 µs
Read to Write
to 90% after Pin 19 changes from “High” to
“Low”.
16-2 Mode switching time TWR TWR is the time required for either Write current
0.6 µs
Write to Read
to decrease to 10% or for the Read amplifier
output∗ to turn to 90% after Pin 19 changes from
“Low” to “High”.
17-1 Mode switching time TSA1 TSA1 is the time required for Pin 11 to turn “High” 3 7 11 µs
safe to unsafe
after the last transition of Write data when Write
data is stopped in Write mode.
17-2 Mode switching time TSA2 TSA2 is the time required for Pin 11 to turn “Low”
1.0 µs
unsafe to safe
after the first transition of Write in Write mode.
18 Mode switching time TPR TPR is the time required for Read amplifier
1.0 µs
Power save to Read
output to turn to 90% after Pin 20 changes from
“High” to “Low”.
19 Head switching time TH TH is the time required for the Read amplifier
output∗ to reach 90% when the selected head
0.6 µs
switched in Read mode.
20 Write current
TPD TPD is the time required for Write current to
30 ns
propagation delay
reach 90% after the Write data falling edge.
time
LH=0µH, RH=0Ω
21 Write current rise/fall TR/TF TR is the time required for Write current to reach
5 10 ns
time
90% from 10%; TF is the same time required to
reach 10% from 90%. LH=0µH, RH=0Ω
∗Read amplifier output 100mVp-p 10MHz
—7—
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