CXG1010N 查看數據表（PDF） - Sony Semiconductor

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CXG1010N

Power Amplifier for PHS

Sony Semiconductor 

Recommended Evaluation Circuit

50mm

CXG1010N

3.0V

RFIN

GND

18n

10n 1000p

680

470

100Ω 6.8kΩ

VCTL

1µ

RV1

Variable

resistor Rv

RV2 10kΩ (Max)

1µ VGG2

180Ω

RFOUT

GND

1µ

GND

VDD

Recommended Gate Bias Circuit and

Circuit Characteristics

3.0V

ViaHole

(V)

VGG2

Glass fabric-base epoxy board (0.2 mm thickness)

GND for the overall back side

100Ω

6.8kΩ

RV1 Variable

0.5

VGG2

RV2

resistor Rv

10kΩ (Max)

470Ω

180Ω

VGG1

680Ω

0

5

10

RV1 (kΩ)

Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for

any problems arising out of the use of these circuits or for any infringement of third party and other right due to same.

—4—

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