NE4210M01-T1 查看數據表（PDF） - NEC => Renesas Technology
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NE4210M01-T1 Datasheet PDF : 12 Pages
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NE4210M01
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
Characteristic
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
+5
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figuer
Associated Gain
Symbol
IGSO
IDSS
VGS(off)
gm
NF
Ga
Test Conditions
VGS = −3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
f = 12 GHz
f = 4 GHz
VDS = 2 V
ID = 10 mA
f = 12 GHz
f = 4 GHz
MIN.
TYP.
MAX.
Unit
0.5
10
µA
20
60
90
mA
−0.2
−0.7
−2.0
V
50
65
mS
0.8
1.1
dB
0.4
9.0
11.0
dB
16.0
2
Preliminary Data Sheet
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