NTD4808N(2012) 查看數據表（PDF） - ON Semiconductor
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NTD4808N Datasheet PDF : 8 Pages
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NTD4808N, NVD4808N
TYPICAL PERFORMANCE CURVES
100
90
80
70
60
50
40
30
20
10
0
0
5.5 V to 10 V
4.5 V
TJ = 25°C
4V
3.8 V
3.6 V
3.4 V
3.2 V
3V
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
80
VDS ≥ 10 V
70
60
50
40
30
20
TJ = 125°C
10
TJ = 25°C
0
TJ = −55°C
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
9.6
ID = 30 A
TJ = 25°C
9.2
8.8
8.4
8.0
7.6
7.2
6.8
6.4
6.0
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.020
0.018 TJ = 25°C
0.016
0.014
0.012
VGS = 4.5 V
0.010
0.008
0.006
0.004
VGS = 11.5 V
0.002
0
10 15 20 25 30 35 40 45 50 55 60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7 ID = 30 A
1.6 VGS = 10 V
1.5
1.4
1.3
10000
1000
VGS = 0 V
100
TJ = 150°C
TJ = 125°C
1.2
1.1
10
1.0
0.9
1
0.8
TJ = 25°C
0.7
0.6
0.1
−50 −25 0 25 50 75 100 125 150 175
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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