NT256D64S88AAG-8B 查看數據表（PDF） - Nanya Technology
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NT256D64S88AAG-8B
Nanya Technology
NT256D64S88AAG-8B Datasheet PDF : 15 Pages
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NT256D64S88AAG
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
(TA = 0 °C ~ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
Symbol
Parameter
tIPW
tRPRE
tRPST
tRAS
Input pulse width
Read preamble
Read postamble
Active to Precharge command
-7K
Min.
Max.
2.2
0.9
1.1
0.40
0.60
45
120,000
-75B
Min.
Max.
2.2
0.9
1.1
0.40
0.60
45
120,000
-8B
Min.
Max.
Unit Notes
-
ns 2-4, 12
0.9
1.1
tCK
1-4
0.40
0.60
tCK
1-4
50
120,000 ns
1-4
Active to Active/Auto-refresh
tRC
65
65
70
ns
1-4
command period
Auto-refresh to Active/Auto-refresh
tRFC
75
75
80
ns
1-4
command period
tRCD Active to Read or Write delay
20
20
20
ns
1-4
Active to Read Command with
tRAP
20
20
20
ns
1-4
Auto-precharge
tRP
Precharge command period
20
20
20
ns
1-4
tRRD
tWR
Active bank A to Active bank B
command
Write recovery time
Auto precharge write recovery +
tDAL
precharge time
15
15
(tWR/
tCK )
+
(tRP/
tCK )
15
15
(tWR/
tCK )
+
(tRP /
tCK )
15
15
(tWR/
tCK )
+
(tRP /
tCK )
ns
1-4
ns
1-4
tCK 1-4, 13
tWTR Internal write to read command delay
1
1
1
tCK
1-4
Exit self-refresh to non-read
tXSNR
75
75
80
ns
1-4
command
tXSRD Exit self-refresh to read command
200
200
200
tCK
1-4
tREFI Average Periodic Refresh Interval
7.8
7.8
7.8
µs 1-4, 8
REV 1.1
08/2002
12
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
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