PHP212L 查看數據表（PDF） - Philips Electronics
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PHP212L Datasheet PDF : 8 Pages
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Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Objective specification
PHP212L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per P-channel
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
IS
source current (DC)
ISM
peak pulsed source current
Ts = 80 °C; note 1
note 2
Ts = 80 °C; note 3
Tamb = 25 °C; note 4
Tamb = 25 °C; note 5
Tamb = 25 °C; note 6
Ts = 80 °C
note 2
−
−30
V
−
±12
V
−
−4
A
−
−16
A
−
3.5
W
−
2.6
W
−
1.1
W
−
1.5
W
−55
+150 °C
−55
+150 °C
−
−2.6
A
−
−10
A
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 27.5 K/W.
5. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 90 K/W.
6. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an Rth a-tp (ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
20
UNIT
K/W
1997 Jun 20
3
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