MAC12D 查看數據表（PDF） - Kersemi Electronic Co., Ltd.
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MAC12D Datasheet PDF : 6 Pages
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MAC12D, MAC12M, MAC12N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak On−State Voltage(1) (ITM = "17 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IDRM,
IRRM
VTM
IGT
—
—
—
—
—
—
5.0
13
5.0
13
5.0
13
Hold Current (VD = 12 V, Gate Open, Initiating Current = "150 mA)
Latch Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IH
—
20
IL
—
20
—
30
—
20
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
VGT
0.5
0.78
0.5
0.70
0.5
0.71
Rate of Change of Commutating Current
(VD = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/µs, Gate Open,
TJ = 125°C, f = 250 Hz, No Snubber)
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
(di/dt)c
dv/dt
di/dt
6.5
—
250
500
—
—
Value
2.2
62.5
260
Max
0.01
2.0
1.85
35
35
35
40
50
80
50
1.5
1.5
1.5
—
—
10
Unit
°C/W
°C
Unit
mA
Volts
mA
mA
mA
Volts
A/ms
V/µs
A/µs
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