MCH3479-TL-W 查看數據表（PDF） - ON Semiconductor

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MCH3479-TL-W

Power MOSFET 20V, 64mΩ, 3.5A, Single N-Channel

ON Semiconductor 

MCH3479

Power MOSFET

20V, 64mΩ, 3.5A, Single N-Channel

www.onsemi.com

Features

• Low On-Resistance

• 1.8V Drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS Compliance

VDSS

20V

RDS(on) Max

64mΩ@ 4.5V

95mΩ@ 2.5V

149mΩ@ 1.8V

ID Max

3.5A

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Drain to Source Voltage

VDSS

Gate to Source Voltage

Drain Current (DC)

VGSS

ID

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

IDP

Power Dissipation

When mounted on ceramic substrate

PD

(900mm2 × 0.8mm)

Junction Temperature

Tj

Storage Temperature

Tstg

Thermal Resistance Ratings

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm2 × 0.8mm)

Symbol

RθJA

Value

Unit

20

V

±12

V

3.5

A

14

A

0.9

W

150

°C

−55 to +150

°C

Value

Unit

138.8

°C/W

Electrical Connection

N-Channel

3

1

1 : Gate

2 : Source

3 : Drain

2

Packing Type : TL Marking

FL

TL

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

1

March 2015 - Rev. 1

Publication Order Number :

MCH3479/D

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