TDA8040T 查看數據表（PDF） - Philips Electronics
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TDA8040T Datasheet PDF : 16 Pages
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Philips Semiconductors
Quadrature demodulator
Objective specification
TDA8040T
SYMBOL
PARAMETER
CONDITIONS MIN.
Voltage controlled oscillator (VCO)
fiVCO(min)
minimum input oscillator frequency
−
fiVCO(max)
maximum input oscillator frequency
300
∆f
frequency deviation
−
∆fdrift
∆fshift
CNRosc
frequency drift
frequency shift
oscillator carrier-to-noise ratio
note 8
−
∆VCC = 5% −
at 10 kHz;
−
note 9
at 100 kHz; −
note 9
Vosc(p-p)
required voltage drive level for external
100
oscillator injection (peak-to-peak value)
Rsource(osc) source resistance for external oscillator
−
generator
I and Q amplifiers
VilQ(p-p)
I and Q channel input voltage
(peak-to-peak value)
note 10
−
VolQ(p-p)
I and Q channel output voltage
(peak-to-peak value)
note 10
−
at 1 dB gain 1.0
compression;
note 10
IM3
intermodulation distortion in the
I and Q channels
note 11
40
BIQ
αct(IQ)
VO(IQ)
bandwidth of I and Q amplifiers
at 0.5 dB
25
crosstalk between the I and Q channels note 12
30
DC output voltage level for the
−
I and Q amplifier
ZI(IQ)
input impedance of the I and Q channels
−
ZO(IQ)
output impedance of the I and Q channels
−
Notes to the characteristics
1. Typical supply currents are defined for VCC = 5 V.
2. The I and Q channel output voltages are measured with the following conditions:
a) fi(RF) = 1⁄2fi(VCO) + 500 kHz (70.5 MHz)
b) the higher frequencies (140.5 MHz) are filtered out.
3. The I and Q channels gain is defined by GIQ = V--V---i-IR--Q--F--(--(r--rm-m---s-s--)-)- .
The gains are measured with the conditions defined in note 2.
TYP.
−
−
6
−
−
85
105
−
−
0.1
0.5
−
−
−
−
2.45
10
50
MAX.
21.4
−
−
100
100
−
−
−
50
−
−
−
−
−
−
−
−
−
UNIT
MHz
MHz
MHz
kHz
kHz
dBc/Hz
dBc/Hz
mV
Ω
V
V
V
dB
MHz
dB
V
kΩ
Ω
1996 Oct 08
7
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