SGR2N60UF 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
SGR2N60UF Datasheet PDF : 7 Pages
| |||
100
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
200Ω
TC = 25℃
TC = 125℃
Eon
Eon
Eoff
10
Eoff
0.5
1.0
1.5
2.0
2.5
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
250
Ω
Tc = 25℃
12
9
300 V
6
200 V
V = 100 V
CE
3
0
0
2
4
6
8
10
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
30
IC MAX. (Pulsed)
10
IC MAX. (Continuous)
1
50us
100us
1㎳
DC Operation
0.1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
20
10
1
0.1
1
Safe Operating Area
VGE=20V, TC=100oC
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
0.5
0.2
1
0.1
0.05
0.02
0.1 0.01
single pulse
0.01
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGR2N60UF Rev. A1
Share Link: 