2N7002K 查看數據表（PDF） - Wuxi NCE Power Semiconductor Co., Ltd
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2N7002K Datasheet PDF : 7 Pages
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http://www.ncepower.com
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=0.2A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
VDS=25V,VGS=0V,
F=1.0MHz
VDD=30V,ID=0.2A
VGS=10V,RGEN=10Ω
VDS=10V,ID=0.3A,
VGS=4.5V
VGS=0V,IS=0.2A
Pb Free Product
2N7002K
1
μA
±10
uA
1
1.5
2.5
V
1.2
3
Ω
1.1
2
Ω
0.1
S
21
50
PF
11
25
PF
4.2
5
PF
10
nS
50
nS
17
nS
10
nS
1.7
3
nC
1.3
V
0.2
A
Wuxi NCE Power Semiconductor Co., Ltd
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