MBR16100 THRU MBR16200
肖特基二极管SCHOTTKY Diodes
RoHS
COMPLIANT
■特征 Features
■外形尺寸和印记 Outline Dimensions and Mark
● 耐正向浪涌电流能力高
High surge forward current capability
TO-220AC
● 低功耗,大电流
Low Power loss, High efficiency
.429(10.9)
MAX
.17(4.31)
.131(3.34)
DIA
.055(1.40)
.045(1.14)
.200(5.10)
.159(4.04)
● Io
● VRRM
16.0A
100-200V
■用途 Applications
● 快速整流用
High speed switching
.129(3.27)
.087(2.22)
.176(4.46)
.124(3.16)
.037(0.94)
.027(0.68)
.22(5.60)
.179(4.55)
.61(15.5)
.571(14.5)
PIN1 2
.576(14.62)
.514(13.06)
PIN1
.126(3.19)
.084(2.14)
.025(0.64)
.011(0.28)
■极限值(绝对最大额定值)
PIN2
CASE
Dimensions in inches and (millimeters)
Limiting Values(Absolute Maximum Rating)
参数名称
符号 单位 条件
MBR
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
Symbol
VRRM
平均整流输出电流
Average Rectified Output Current
Io
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
IFSM
Unit Conditions
V
正弦半波 60Hz,电阻负载,Tc(Fig.1)
A 60HZ Half-sine wave, Resistance load,
Tc(Fig.1)
A
60HZ正弦波,一个周期,Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
16100
100
16150
150
16
250
正向浪涌电流的平方对电流浪涌持
续
I2t
A2s
1ms ≤ t < 8.3ms
极管
Tj=25 ℃ , 单 个 二
时间的积分值
Current Squared Time
1ms≤t<8.3ms Tj=25℃,Rating
of per diode
贮存温度
Storage Temperature
Tstg
℃
261
-55 ~ +150
结温
Junction Temperature
Tj
℃ 在正向直流条件下,没有施加反向压
降,通电≤1h(图示1)①
IN DC Forward Mode-Forward
Operations,without reverse bias, t
≤1 h (Fig. 1)①
-55 ~ +150
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
Item
符号 单位
Symbol Unit
测试条件
Test Condition
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
VFM
IRRM1
IRRM2
V
I FM =16.0A
mA
VRM =VRRM
Ta=25℃
Ta=100℃
16100
0.85
最大值
Max
MBR
16150
0.9
0.05
1
热阻
Thermal Resistance
RθJ-C
℃/W
结和壳之间
Between junction and case
2.0
■ 备注 NOTE
①Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test.
16200
200
16200
0.95.
S-B152
Rev.1.1, 29-Nov-14
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com