NRVBB3030CTLG 查看數據表（PDF） - ON Semiconductor
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NRVBB3030CTLG Datasheet PDF : 9 Pages
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MBRB3030CTLG, NRVBB3030CTLG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 115C) Per Device
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
30
V
VRWM
VR
IO
15
A
30
IFRM
A
30
IFSM
A
300
Peak Repetitive Reverse Surge Current (1.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
−55 to +150
C
Operating Junction Temperature Range
TJ
−55 to +125
C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dV/dt
V/ms
10,000
Reverse Energy, Unclamped Inductive Surge (TJ = 25C, L = 3.0 mH)
EAS
224.5
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (All device data is “Per Leg” except where noted.)
Characteristic
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Case
1. Mounted using minimum recommended pad size on FR−4 board.
Symbol
RqJA
RqJC
Value
50
1.0
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TJ = 25C)
(IF = 30 A, TJ = 25C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated VR, TJ = 25C)
(Rated VR, TJ = 125C)
2. Pulse Test: Pulse Width = 250 ms, Duty Cycle 2.0%.
Symbol
Value
Unit
VF
V
0.44
0.51
IR
mA
2.0
195
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