D44VH7 查看數據表（PDF） - New Jersey Semiconductor
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D44VH7 Datasheet PDF : 3 Pages
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second breakdown
Second Breakdown with Base Forward Biased
Second BreaKdown with Base Reverse Biased
on characteristics'1'
DC Current Gain
(lc = 2 A, VCE= W)
(IC = 4 A , VCE = 1V)
Collector-Emitter Saturation Voltage
Oc = 8A, IB = 0.4A)
(IC = 8A, IB = 0.4A, TC = 100°C)
(lc = 15A, IB = 3.0A, Tc = 100°C)
Base-Emitter Saturation Voltage
(lc = 8A, IB=0.4A)
(lc = 8A, IB = 0.4A, TC - 100°C)
dynamic characteristics
Current-Gain — Bandwidth Product
(IC = 0.1A, VCE = 10V, ftest = 1 MHz)
Output Capacitance
(VCB = 10V, IE = 0, ftest = 1 MHz)
switching characteristics
Resistive Load (See Figure 16 for Test Circuit)
Delay Time
Rise Time
Storage Time
Fall Time
Vri~ = 20V \ • 8A
IB1 = 'B2 = 0.8A
tn = 25 yusec
Inductive Load, Clamped (See Figure 15 for Test Circuit)
Storage Time
Fall Time
VCC = 20V, IC =8A
VCLAMP = Rated VCEx
Storage Time
Fall Time
IB1 = 0.8A. VBE(off) =-5V
L ~ 200 //h
(1) Pulse Duration = 300 //sec, Duty Factor« 2%.
(2) See Figure 15 for Test Circuit.
FBSOA
RBSOA
hFE
VCE(sat)
vBE(sat)
fT
COB
TC
td
tr
ts
tf
ts
tf
ts
tf
SEE FIGURE 7
SEE FIGURE 8
35
—
20
—
0.4
0.5
0.8
-
1.2
1.1
Typical
50
120
Maximum
25°C
100°C
50
—
250
—
700
—
200
—
800
—
180
400
Typical
283
370
130
150
—
V
V
MHz
PF
nsec
nsec
nsec
nsec
nsec
nsec
nsec
nsec
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