BYV26B 查看數據表（PDF） - Zibo Seno Electronic Engineering Co.,Ltd
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BYV26B Datasheet PDF : 2 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
BYV26A – BYV26C
1.0A SUPER FAST RECOVERY RECTIFIER
B
D
A
F
C
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
H
G
E
SMA/DO-214AC
Dim
Min
Max
A
2.29
2.92
B
4.00
4.60
C
1.27
1.63
D
0.15
0.31
E
4.80
5.59
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Marking Code
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current
(Note 1)
@TA = 55°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@IF = 1.0A
VFM
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
Typical Junction Capacitance (Note 3)
Cj
Typical Thermal Resistance (Note 4)
Operating Temperature Range
RJL
Tj
Storage Temperature Range
TSTG
BYV26A
ES1D
200
140
BYV26B
ES1G
400
280
1.0
30
2.5
5.0
150
35
45
100
-65 to +150
-65 to +150
BYV26C
ES1J
600
420
Unit
V
V
A
A
V
µA
nS
pF
°C/W
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
BYV26A – BYV26C
1 of 2
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