AS6C1008L 查看數據表（PDF） - Alliance Semiconductor
零件编号
产品描述 (功能)
生产厂家
AS6C1008L Datasheet PDF : 15 Pages
| |||
AS6C1008L
128k x 8 BIT SUPER LOW POWER CMOS SRAM
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE#
H
Standby
X
Output Disable
L
Read
L
Write
L
Note: H = VIH, L = VIL, X = Don't care.
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB1
ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITION
MIN.
Supply Voltage
Input High Voltage
Input Low Voltage
VCC
VIH*1
VIL*2
2.7
0.7*Vcc
- 0.2
Input Leakage Current
ILI VCC ≧ VIN ≧VSS
-1
Output Leakage
Current
ILO
VCC ≧ VOUT ≧VSS,
Output Disabled
-1
Output High Voltage
VOH IOH = -1mA
2.2
Output Low Voltage
VOL IOL = 2mA
-
Cycle time = Min.
Average Operating
Power supply Current
ICC CE# = VIL and CE2 = VIH,
-
II/O = 0mA
Cycle time = 1µs
ICC1
CE#≦0.2V and CE2≧VCC-0.2V,
II/O = 0mA
-
other pins at 0.2V or VCC-0.2V
Standby Power
Supply Current
CE# ≧VCC-0.2V
or CE2≦0.2V
-SL
-
ISB1 Other pins at 0.2V
or Vcc-0.2V
-SLE/-SLI -
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
TYP. *4
3.0
-
-
-
-
2.7
-
MAX.
5.5
VCC+0.3
0.6
1
1
-
0.4
10
60
1
10
1
10
1
10
UNIT
V
V
V
µA
µA
V
V
mA
mA
µA
µA
Confidential
- 4/15 -
Rev.2.a April 2016
Share Link: 