MJ2501 查看數據表（PDF） - ON Semiconductor
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MJ2501 Datasheet PDF : 4 Pages
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MJ2501 MJ3001
50,000
20,000
10,000
5000
TJ = 150°C
2000
25°C
1000
500
200
100
50
0.01 0.02
-ā55°C
VCE = 3.0 Vdc
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5.0 10
3.5
3.0
TJ = 25°C
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
1.0
VBE @ VCE = 3.0 V
0.5
VCE(sat) @ IC/IB = 250
0
0.01 0.02
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
5.0 10
3000
2000
1000
500
300
200
100
50
30
103
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
104
105
106
f, FREQUENCY (Hz)
Figure 3. Small–Signal Current Gain
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
TJ = 200°C
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
There are two limitations on the power handling ability of
a transistor: junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
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