IRFB59N10DPBF 查看數據表（PDF） - Unspecified
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IRFB59N10DPBF Datasheet PDF : 7 Pages
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IRFB59N10DPBF
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 125 °C
VDS = 100 V, VGS = 0 V, TJ = 175 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125 °C
VGS = 10 V, ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = 100 V, VGS = 10 V, ID = 58 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
tf
VDD = 100 V, RL = 1.5 Ω
ID ≅ 58 A, VGEN = 10 V, Rg = 2.5
Ω
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD
IF = 58 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 30 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
100
2
120
25
0.5
Typ.
Max.
4
± 100
1
50
250
0.018
0.023
0.037
1500
210
110
90
23
34
1.3
3.1
24
35
220
330
45
70
200
300
70
115
1.0
1.5
130
200
8
12
0.52
1.2
Unit
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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