DS1848E-050 查看數據表（PDF） - Maxim Integrated

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DS1848E-050

Dual Temperature-Controlled NV Variable Resistor & Memory

Maxim Integrated 

Memory Location Name of Location

E2h

Temperature MSB

E3h

Temperature LSB

E4h

E5h to E6h

E7h

Address Pointer

User Memory

Address Select

E8h to EFh

F0h

F1h

F2h to FFh

User Memory

Resistor 0 Setting

Resistor 1 Setting

User memory

DS1848

Function of Location

With AEN = 0 the user can operate in a test

mode. Address updates made from the

temperature sensor will cease. The user can load a

memory location into E4h and verify that the

values in locations F0h and F1h are the expected

user-defined values.

This byte contains the MSB of the 13-bit 2s

complement temperature output from the

temperature sensor.

S 27 26 25 24 23 22 21

This byte contains the LSB of the 13-bit 2s

complement temperature output from the

temperature sensor.

20 2-1 2-2 2-3 2-4 X X X

For example temperature readings, refer to Table

2.

Calculated, current resistor address (0h – 47h).

The user-defined resistor setting at this location in

the respective look-up table will be loaded into

F0h and F1h to set the two resistors.

General purpose user memory (SRAM)

Internal or external device address select. This

byte allows the user to use the external address

pins or an internal register location to determine

the device address.

A2 A1 A0 ENB

ENB = 0 and external A2, A1, A0 grounded,

device will use internal address bits (A2, A1, A0)

in this register

ENB = 1, external A2, A1, A0 = any setting,

device will use external address pins

Default setting is 01h. The device uses external

pins to determine its address.

General purpose user memory (SRAM)

In the user-controlled setting mode, this block

contains the resistor 0 setting.

In the user-controlled setting mode, this block

contains the resistor 1 setting.

General purpose user memory (SRAM)

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