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ISL83080EIBZ 查看數據表(PDF) - Renesas Electronics

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ISL83080EIBZ Datasheet PDF : 21 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
ISL83080E/82E/83E/84E/85E/86E/88E
Typical Performance Curves VCC = 5V, TA = +25°C; Unless Otherwise Specified (Continued)
DI
5
0
RDIFF = 54, CL = 100pF
5
0
RO
DI
5
0
RDIFF = 54, CL = 100pF
5
0
RO
4
3 B/Z
2 A/Y
1
0
TIME (20ns/DIV)
FIGURE 22. DRIVER AND RECEIVER WAVEFORMS,
LOW TO HIGH (ISL83086E, ISL83088E)
40
35
VOL, +25°C
30
VOL, +85°C
25
VOH, +25°C
20
15
VOH, +85°C
10
5
0
0
1
2
3
4
5
RECEIVER OUTPUT VOLTAGE (V)
FIGURE 24. RECEIVER OUTPUT CURRENT vs RECEIVER
OUTPUT VOLTAGE
4
3 A/Y
2 B/Z
1
0
TIME (20ns/DIV)
FIGURE 23. DRIVER AND RECEIVER WAVEFORMS,
HIGH TO LOW (ISL83086E, ISL83088E)
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
525
PROCESS:
Si Gate BiCMOS
FN6085 Rev 10.00
February 15, 2016
Page 16 of 21

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