ISL6253 查看數據表（PDF） - Renesas Electronics
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ISL6253 Datasheet PDF : 22 Pages
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ISL6253
Absolute Maximum Ratings
DCIN, CSIP, DCPRN, ACPRN, CSON to GND . . . . . . -0.3V to +28V
CSIP-CSIN, CSOP-CSON . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
CSIP-SGATE, CSIP-BGATE . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 28V
BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +35V
BOOT-PHASE, VDD-GND, VDDP-PGND . . . . . . . . . . . . -0.3V to 7V
ICM, ICOMP, VCOMP . . . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
ACSET and DCSET to GND (Note 3) . . . . . . . . -0.8V to VDD+0.3V
VDDP, ACLIM, CHLIM, VREF, CELLS. . . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Information
Thermal Resistance
JA (°C/W) JC (°C/W)
QFN Package (Notes 4, 6). . . . . . . . . .
39
9.5
QSOP Package (Note 5) . . . . . . . . . . .
80
NA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (soldering, 10s).. . . . . . . . . . . . . . . . . . . . +300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratings only and operation of the
device at these or any other conditions above those indicated in the operational sections of the specifications is not implied.
NOTES:
3. When the voltage across ACSET and DCSET is below 0V, the current through ACSET and DCSET should be limited less than 1mA.
4. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
5. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
DCIN = CSIP = CSIN = 18V, CSOP = CSON = 12V, ACSET = DCSET = 1.5V, VREF = ACLIM = CHLIM,
VADJ = Floating, EN = VDD = 5V, BOOT-PHASE = 5.0V, GND = PGND = 0V, CVDD = 1µF IVDD = 0mA,
TA = -10°C to +100°C, TJ 125°C, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNITS
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
7
25
V
DCIN Quiescent Current
EN = VDD, 7V DCIN 25V
1.6
4
mA
DCIN Quiescent Current in Shutdown mode
EN = 0, 7V DCIN 25V
1.3
3
mA
Battery Leakage Current (Note 5)
DCIN = 0, no load
2
10
A
VDD Output Voltage/Regulation
VDD Undervoltage Lockout Trip Point
7V DCIN 25 V, 0 IVDD 30mA
Rising
4.925 5.075 5.225
V
4.2
4.4
4.6
V
Hysteresis
100
250
400
mV
Reference Output Voltage VREF
O IVREF 300A
2.365 2.390 2.415
V
CSON = 16.8V, CELLS = VDD, VADJ = Float -0.5
0
0.5
CSON = 12.6V, CELLS = GND, VADJ = Float -0.55
0
0.55
CSON = 8.4V, CELLS = FLOAT, VADJ = Float -0.55
0
0.55
CSON = 17.64V, CELLS = VDD, VADJ = VREF -0.6
0
0.6
Battery Charge Voltage Accuracy
CSON = 13.23V, CELLS = GND, VADJ = VREF -0.6
0
0.6
%
CSON = 8.82V, CELLS = FLOAT, VADJ = VREF -0.6
0
0.6
CSON = 15.96V, CELLS = VDD, VADJ = GND -0.6
0
0.6
CSON = 11.97V, CELLS = GND, VADJ = GND -0.6
0
0.6
CSON = 7.98V, CELLS = FLOAT, VADJ = GND -0.6
0
0.6
TRIP POINTS
ACSET Threshold
1.235 1.26 1.285
V
ACSET Input Bias Current Hysteresis
2
3.4
4.8
A
ACSET Input Bias Current
ACSET > 1.26V
2
3.4
4.8
A
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
A
DCSET Threshold
1.235 1.26 1.285
V
FN9117 Rev.2.00
August 2004
Page 3 of 22
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