PSMN1R0-30YLC 查看數據表（PDF） - Nexperia B.V. All rights reserved

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PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Nexperia B.V. All rights reserved 

PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using

NextPower technology

15 January 2015

Product data sheet

1. General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

• High reliability Power SO8 package, qualified to 175°C

• Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

• Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

• Ultra low Rdson and low parasitic inductance

3. Applications

• DC-to-DC converters

• Lithium-ion battery protection

• Load switching

• Power OR-ing

• Server power supplies

• Sync rectifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDS

drain-source voltage 25 °C ≤ Tj ≤ 175 °C

ID

drain current

Tmb = 25 °C; VGS = 10 V; Fig. 2

Ptot

total power dissipation Tmb = 25 °C; Fig. 1

Tj

junction temperature

Static characteristics

RDSon

drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

resistance

Fig. 12

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

Min Typ Max Unit

-

-

30

V

[1]

-

-

100 A

-

-

272 W

-55 -

175 °C

-

1.1 1.4 mΩ

-

0.85 1.15 mΩ

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