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PSMN1R1-25YLC

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Nexperia B.V. All rights reserved 

PSMN1R1-25YLC

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 1 — 2 May 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

„ High reliability Power SO8 package,

qualified to 175°C

„ Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

„ Ultra low QG, QGD and QOSS for high

system efficiencies at low and high

loads

„ Ultra low Rdson and low parasitic

inductance

1.3 Applications

„ DC-to-DC converters

„ Lithium-ion battery protection

„ Load switching

„ Power OR-ing

„ Server power supplies

„ Sync rectifier

1.4 Quick reference data

Table 1.

Symbol

VDS

ID

Quick reference data

Parameter

drain-source voltage

drain current

Ptot

total power dissipation

Tj

junction temperature

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

25 °C ≤ Tj ≤ 175 °C

Tmb = 25 °C; VGS = 10 V;

see Figure 1

Tmb = 25 °C; see Figure 2

VGS = 4.5 V; ID = 25 A;

Tj = 25 °C;

see Figure 12

VGS = 10 V; ID = 25 A;

Tj = 25 °C;

see Figure 12

Min

-

[1] -

-

-55

-

-

Typ Max Unit

-

25 V

-

100 A

-

215 W

-

175 °C

1.2 1.5 mΩ

0.95 1.15 mΩ

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