2SK1589-T1B-A 查看數據表（PDF） - Unspecified
零件编号
产品描述 (功能)
生产厂家
2SK1589-T1B-A Datasheet PDF : 8 Pages
| |||
2SK1589-T1B-A
N-Channel 100-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100
2.8 at VGS = 10 V
ID (mA)
260
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SOT-23
G1
3D
S2
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)b
Pulsed Drain Currenta
Power Dissipationb
Maximum Junction-to-Ambientb
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Limit
100
± 20
260
150
800
0.37
0.15
350
- 55 to 150
Unit
V
mA
W
°C/W
°C
E-mail：China@VBsemi TEL:86-755-83251052
1
Share Link: 