MMDF5N02Z 查看數據表（PDF） - ON Semiconductor
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MMDF5N02Z Datasheet PDF : 12 Pages
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MMDF5N02Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 4.) V(BR)DSS
20
−
−
15
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0)
(Note 4.)
IDSS
IGSS
VGS(th)
µAdc
−
−
0.5
−
−
15
−
−
150
−
−
1.5
µAdc
Vdc
0.5
0.78
1.1
−
3.0
−
mV/°C
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 2.7 Vdc, ID = 2.5 Adc)
(Cpk ≥ 2.0) (Note 4.)
Forward Transconductance (VDS = 9.0 Vdc, ID = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 6.0 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc, RG = 6 Ω)
Fall Time
Gate Charge
(VDS = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
−
34
−
44
3.0
5.6
mΩ
40
50
−
Mhos
−
450
630
pF
−
330
460
−
160
225
−
29
37
ns
−
182
258
−
190
238
−
225
274
−
10.7
12
nC
−
1.1
−
−
5.4
−
−
3.5
−
Vdc
−
0.78
1.0
−
0.65
−
−
195
−
ns
−
72
−
−
123
−
−
0.5
−
µC
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