MRF9045SR1 查看數據表（PDF） - Motorola => Freescale
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MRF9045SR1 Datasheet PDF : 12 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9045/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
28 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — –32 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9045R1
MRF9045SR1
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF9045R1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 360C–05, STYLE 1
NI–360S
MRF9045SR1
MRF9045R1
MRF9045SR1
Symbol
VDSS
VGS
PD
PD
Tstg
TJ
Value
65
–0.5, +15
125
0.71
175
1
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
Symbol
Max
MRF9045R1
RθJC
1.4
MRF9045SR1
1.0
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9045R1 MRF9045SR1
1
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